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HGT1S14N37G3VLS, HGTP14N37G3VL
Data Sheet December 2001
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit. Formerly Developmental Type TA49169.
Features
* Logic Level Gate Drive * Internal Voltage Clamp * ESD Gate Protection * TJ = 175oC * Internal Series and Shunt Gate Resistors * Low Conduction Loss * Ignition Energy Capable
Packaging
JEDEC TO-263AB BRAND
Ordering Information
PART NUMBER HGT1S14N37G3VLS HGTP14N37G3VL PACKAGE TO-263AB TO-220AB 14N37GVL 14N37GVL
G E
COLLECTOR (FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e. HGT1S14N37G3VLS9A
Symbol
COLLECTOR
JEDEC TO-220AB
E R1 GATE R2 C G
EMITTER
COLLECTOR (FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B
HGT1S14N37G3VLS, HGTP14N37G3VL
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGT1S14N37G3VLS, HGTP14N37G3VL Collector to Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter to Collector Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous at VGE = 5V, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE = 5V, TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . IC110 Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Inductive Switching Current at L = 3mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS
o C = 150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy at L = 3 mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UNITS V V A A V A A mJ W W/oC
oC oC
380 24 25 18 10 15 11.5 340 136 0.91 -55 to 175 -55 to 175 5 2 300 260
at L = 3mH, T
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ Electrostatic Voltage HBM at 250pF, 1500 All Pin Configurations. . . . . . . . . . . . . . . . . . ESD Electrostatic Voltage MM at 200pF, 0 All Pin Configurations. . . . . . . . . . . . . . . . . . . . . . ESD Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
kV kV
oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. May be exceeded if IGEM is limited to 10mA.
Electrical Specifications
PARAMETER
TJ = 25oC, Unless Otherwise Specified SYMBOL BVCER VGEP QG(ON) BVCE(CL) BVECS ICES TEST CONDITIONS IC = 10mA, RG = 1k, VGE = 0V, TJ = -55oC to 175oC (Figure 16) IC = 6.5A, VCE = 12V IC = 6.5A, VCE = 12V, VGE = 5V (Figure 16) IC = 15A, R G = 1k IC = 10mA VCE = 300V, VGE = 0V (Figure 13) VCE = 250V, VGE = 0V (Figure 13) TJ = 25oC TJ = 175oC TJ = 25oC TJ = 175oC TJ = 25oC TJ = 175oC TJ = -55oC TJ = 25oC TJ = 25oC TJ = 175oC TJ = 25oC TJ = 175oC MIN 320 320 24 1.3 10 VGE = 10V 310 TYP 350 2.76 27 350 28 1.3 1.25 1.45 1.5 1.6 1.7 1.8 70 18 500 MAX 380 380 40 250 10 75 10 50 1.45 1.6 1.75 1.9 2 2.3 2.2 150 26 1000 UNITS V V nC V V A A A A mA mA V V V V V V V k A
Collector to Emitter Breakdown Voltage Gate to Emitter Plateau Voltage Gate Charge Collector to Emitter Clamp Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
IECS
VEC = -24V, VGE = 0V (Figure 13) IC = 6A, VGE = 4.0V (Figures 3 through 9) IC = 10A, VGE = 4.5V (Figures 3 through 9) IC = 14A, VGE = 5V (Figures 3 through 9)
Collector to Emitter On-State Voltage
VCE(ON)
Gate to Emitter Threshold Voltage Gate Series Resistance Gate to Emitter Resistance Gate to Emitter Leakage Current
VGE(TH) R1 R2 IGES
IC = 1mA, V CE = VGE (Figure 12)
(c)2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B
HGT1S14N37G3VLS, HGTP14N37G3VL
Electrical Specifications
PARAMETER Gate to Emitter Breakdown Voltage Current Turn-On Delay Time Resistive Load Current Turn-On Rise Time Resistive Load Current Turn-Off Time Inductive Load Inductive Use Test TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL BVGES td(ON)I TEST CONDITIONS IGES = 2mA IC = 6.5A, RG = 1k, VGE = 5V, RL = 2.1, VDD = 14V, TJ = 150oC (Figure 14) IC = 6.5A, RG = 1k VGE = 5V, RL = 2.1 VDD = 14V, TJ = 150oC (Figure 14) MIN 12 TYP 14 1 MAX 4 UNITS V s
trI
-
3
7
s
td(OFF)I + tfI IC = 6.5A, RG = 1k VGE = 5V, L = 300H VDD = 300V, TJ = 150oC (Figure 14) ISCIS L = 3mH, VG = 5V, RG = 1k (Figures 1 and 2) (Figure 18) TC = 150oC TC = 25oC
-
10
30
s
11.5 15 -
-
1.1
A A
oC/W
Thermal Resistance
RJC
Typical Performance Curves
ISCIS , INDUCTIVE SWITCHING CURRENT (A) 60
Unless Otherwise Specified
ISCIS, INDUCTIVE SWITCHING CURRENT (A) 56 RG = 1k, VGE = 5V 48 40 32 24 16 8 0 TJ = 150oC TJ = 25oC ISCIS CAN BE LIMITED BY gfs at VGE = 5V
RG = 1k, VGE = 5V 52 44 36 28 20 12 4 40 TJ = 150oC 80 120 160 200 TJ = 25oC ISCIS CAN BE LIMITED BY gfs at VGE = 5V
0
2
4
6
8
10
tAV, TIME IN AVALANCHE (ms)
L, INDUCTANCE (mH)
FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs TIME IN AVALANCHE
FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs INDUCTANCE
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1.28 ICE = 6A 1.24 1.20 1.16 1.12 1.08 1.04 1.00 -50 VGE = 4.5V VGE = 5.0V VGE = 4.0V
1.50 ICE = 10A 1.46 VGE = 4.0V
1.42 VGE = 4.5V
1.38
1.34
VGE = 5.0V
25
100
175
1.30 -50
25
100
175
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs JUNCTION TEMPERARURE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs JUNCTION TEMPERATURE
(c)2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B
HGT1S14N37G3VLS, HGTP14N37G3VL Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) 45 DUTY CYCLE < 0.5%, TJ = 175oC PULSE DURATION = 250s VGE = 4.5V 30 VGE = 4.0V 15
Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE = 5.0V
45
DUTY CYCLE < 0.5%, TJ = 150oC PULSE DURATION = 250s VGE = 4.5V
VGE = 5.0V
30 VGE = 4.0V
15
0
0
1
2
3
4
5
0
0
1
2
3
4
5
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
60 50
DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250s VGE = 4.5V
70 60 50 40
VGE = 5.0V
DUTY CYCLE < 0.5%, TJ = -40oC PULSE DURATION = 250s VGE = 4.5V
VGE = 5.0V
40 30 20 10 0 VGE = 4.0V
VGE = 4.0V 30 20 10 0
0
1
2
3
4
5
0
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 7. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. COLLECTOR TO EMITTER ON-STATE VOLTAGE
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
60 VGE 50 40 30 20 10 0 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V
TJ = 25oC
40
DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250s
32 TJ = 150oC 24
16 TJ = 25oC 8 TJ = -40oC 1 2 3 4 5
0
0
1
2
3
4
5
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 9. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 10. TRANSFER CHARACTERISTIC
(c)2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B
HGT1S14N37G3VLS, HGTP14N37G3VL Typical Performance Curves
28 ICE , DC COLLECTOR CURRENT (A) 24 20 16 12 8 4 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) VGE(TH) , THRESHOLD VOLTAGE (V) VGE = 5V
Unless Otherwise Specified (Continued)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 -50 ICE = 1mA VCE = VGE
25
100
175
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 11. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
10000
16 ICE = 6.5A, VGE = 5V, RG = 1k VECS = 24V SWITCHING TIME (s) 14 RESISTIVE tOFF 12 10 8 6 RESISTIVE tON 4 INDUCTIVE tOFF
LEAKAGE CURRENTS (A)
1000
100 VCES = 300V 10
1
VCES = 250V
0.1 25
50
75
100
125
150
175
2
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (oC)
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 13. LEAKAGE CURRENT vs JUNCTION TEMPERATURE
FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE
2400 FREQUENCY = 1MHz 2000 C, CAPACITANCE (pF) 1600 CIES 1200 800 400 0 VGE , GATE TO EMITTER VOLTAGE (V)
8
IG(REF) = 1mA, RL = 1.865, TJ = 25oC
6 VCE = 12V 4
CRES COES 0 5 10 15 20 25
2 VCE = 6V 0
0
8
16
24
32
40
48
56
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
(c)2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B
HGT1S14N37G3VLS, HGTP14N37G3VL Typical Performance Curves
360 BVCER , BREAKDOWN VOLTAGE (V) TJ (oC) 350 -55 25 150 340 175 ICER = 10mA
Unless Otherwise Specified (Continued)
330
320 0 2 4 6 8 10 RG , GATE SERIES RESISTANCE (k)
FIGURE 17. BREAKDOWN VOLTAGE vs SERIES GATE RESISTANCE
ZJC , NORMALIZED THERMAL RESPONSE
100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 10-5 SINGLE PULSE 10-4 10-3 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-2 10-1 PD t2 100 t1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 18. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuits
3mH VDD C RG = 1k DUT G E 5V G
R or L
LOAD
C RG
PULSE GEN
DUT
+
E
VDD
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 20. tON AND tOFF SWITCHING TEST CIRCUIT
(c)2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B

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